{"id":40,"date":"2022-07-07T11:10:57","date_gmt":"2022-07-07T15:10:57","guid":{"rendered":"https:\/\/mse.ncsu.edu\/collazo\/?page_id=40"},"modified":"2025-10-31T14:48:22","modified_gmt":"2025-10-31T18:48:22","slug":"welcome-to-the-wide-bandgaps-group","status":"publish","type":"page","link":"https:\/\/mse.ncsu.edu\/collazo\/","title":{"rendered":"Welcome to the Wide-Bandgap (WBG) Lab"},"content":{"rendered":"\n\n\n\n
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The Wide-Bandgap (WBG) Semiconductor Laboratory, led by Professors Zlatko Sitar and Ram\u00f3n Collazo, pioneers research in the growth, characterization, and device integration of III-nitride and related wide-bandgap semiconductors. The team develops advanced methods for bulk and epitaxial crystal growth, polarity control, and defect management, enabling the development of next-generation optoelectronic and power devices. <\/p>\n\n\n <\/div>\n\n\n

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Ram\u00f3n Collazo,
University Faculty Scholar<\/h2>\n

\n Granted in 2021 by NC State\n <\/p>\n <\/div>\n <\/div>\n \n\n <\/div>\n\n\n <\/div>\n \n\n\n

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Ram\u00f3n Collazo, Principal Investigator<\/h2>\n

Professor Ram\u00f3n Collazo, University Faculty Scholar, received his Ph.D. in Materials Science and Engineering from North Carolina State University in 2002. His research focuses on the growth, characterization, and fundamental properties of III-nitride wide-bandgap semiconductors. A recognized expert in metal-organic chemical vapor deposition (MOCVD) and epitaxial growth, he leads efforts to advance high-performance materials for optoelectronic and power device applications. He has received multiple awards for research and mentoring excellence and currently co-directs the Wide-Bandgap Semiconductor Laboratory at NC State.<\/p>\n \n

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Collazo’s key research areas<\/h2>\n <\/div>\n
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Controlled Polarity Engineering in III-Nitrides<\/h3>\n \n\n \n\t \t

Understanding and manipulating polarity in nitrides to enable lateral homojunction devices<\/p>\n\t \t \n <\/div>\n\n <\/div>\n\n\n

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Bulk AlN Substrates and Epitaxial Growth<\/h3>\n \n\n \n\t \t

Developing high-quality AlN single crystals and epitaxial thin films for optoelectronics and power devices<\/p>\n\t \t \n <\/div>\n\n <\/div>\n\n\n

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Characterization and Device Integration of Wide Bandgap Materials<\/h3>\n \n\n \n\t \t

Linking material characterization (optical, structural, electrical) to device performance in nitrides and oxides<\/p>\n\t \t \n <\/div>\n\n <\/div>\n<\/div>\n\n <\/div>\n <\/div>\n <\/div>\n<\/div>\n\n\n

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Zlatko Sitar, NAI Senior Member<\/h2>\n

\n Granted in 2023 by the National Academy of Inventors\n <\/p>\n <\/div>\n <\/div>\n \n\n <\/div>\n\n\n

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Through innovations in aluminum nitride (AlN) crystal growth, lateral polarity engineering, and materials processing, the group advances the fundamental science and commercial applications of wide-bandgap materials\u2014driving breakthroughs in deep-UV light sources, high-voltage electronics, and energy-efficient systems.<\/p>\n\n\n <\/div>\n\n\n <\/div>\n \n\n\n

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Zlatko Sitar, Principal Investigator<\/h2>\n

Professor Zlatko Sitar, Kobe Steel Distinguished Professor of Materials Science and Engineering, received his Ph.D. from North Carolina State University in 1990. He is internationally recognized for pioneering work in the synthesis and characterization of wide-bandgap materials, particularly aluminum nitride and gallium nitride. His research has significantly advanced the understanding of crystal growth and defect control in III-nitrides, enabling the development of state-of-the-art electronic and photonic devices. He serves as co-director of the Wide-Bandgap Semiconductor Laboratory at North Carolina State University.<\/p>\n \n

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Sitar’s key research areas<\/h2>\n <\/div>\n
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AlN Crystal Growth and Commercialization<\/h3>\n \n\n \n\t \t

Pioneering high-quality AlN bulk growth and enabling commercialization via HexaTech, Inc.<\/span>\n\t\t\t\n\t\t\t\n\t\t<\/svg><\/span><\/p>\n\t \t \n <\/div>\n\n <\/a>\n\n\n

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III-Nitride Epitaxy and Lateral Polarity Devices<\/h3>\n \n\n \n\t \t

Innovative growth of lateral polar structures and devices such as lateral p-n diodes and novel FETs<\/p>\n\t \t \n <\/div>\n\n <\/div>\n\n\n

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Wide\/Extreme Bandgap Semiconductors and Devices<\/h3>\n \n\n \n\t \t

Developing materials, wafers, and device architectures for deep-UV, power and high-voltage applications<\/p>\n\t \t \n <\/div>\n\n <\/div>\n<\/div>\n\n <\/div>\n <\/div>\n <\/div>\n<\/div>\n\n\n\n

Research Focus:<\/strong> Advancing Wide-Bandgap Semiconductor Materials and Devices<\/strong><\/h3>\n\n\n\n

Our areas of expertise include:<\/strong><\/p>\n\n\n\n