Welcome to the Wide Bandgaps Group!
The Wide Bandgaps Group is developing a process for controlling the polarity in III-nitrides to develop lateral polarity homojunctions along with their application to the first lateral p/n junction. Additionally, we work with the development of AlN bulk single crystal substrates, their surface preparation, and further epitaxial thin film deposition for optoelectronics and power device applications.
Research Areas
- Thermodynamic approach to the metal organic chemical deposition process of III-nitrides
- Control of polarity in III-nitride and fabrication of lateral polar homojunctions
- Development of the technology for AlN and Al-rich AlGaN epitaxy on AlN single crystals substrates