Zlatko Sitar
Kobe Steel Distinguished Professor and Professor of Physics
- Email: sitar@ncsu.edu
- Office: Research Building I 217
Prof. Sitar founded the WideBandgaps research laboratory that is focusing on bulk and thin film growth, characterization, and device development in wide bandgap semiconductors: GaN, AlN, and their alloys. He has pioneered the III-nitride MBE process through the design of a unique ECR plasma source, developed, patented, and commercialized a process for growth of AlN crystals, which is currently the only commercial high-quality AlN crystal growth process in the world (commercialized by HexaTech, Inc.), developed, patented, and commercialized epi-ready wafers and device layer growth processes on AlN wafers, which are the basis for high-efficiency deep-UV lasers and light emitting diodes, invented and patented a process for growth of III-nitride lateral polar structures via MOCVD and proposed and demonstrated novel devices based on this invention, which include lateral p-n diodes, low contact-resistance field effect transistors, quasi phase matched structures for optical frequency doubling, and superjunction-based devices.
Prof. Sitar directs the Materials Research Center at NCSU and holds joint appointments in Physics Department at NCSU and Electrical Engineering at University of Nagoya, Japan. His collaborative network spans all four inhabited continents. Based on his research, he founded HexaTech, Inc., an NCSU spin-out focusing on AlN crystal growth and wafer production and Adroit Materials, Inc., who is focusing on the development of UV light emitting devices on the AlN platform and vertical devices on native GaN substrates.
Publications
- Dissolution of Mg-enriched defects in implanted GaN and increased p-type dopant activation
- Huynh, K., Wang, Y., Liao, M. E., Tweedie, J., Reddy, P., Breckenridge, M. H., … Goorsky, M. S. (2024), JOURNAL OF APPLIED PHYSICS, 135(2). https://doi.org/10.1063/5.0179623
- High-current, high-voltage AlN Schottky barrier diodes
- Quinones, C. E., Khachariya, D., Reddy, P., Mita, S., Almeter, J., Bagheri, P., … Sitar, Z. (2024, October 1), https://doi.org/10.35848/1882-0786/ad81c9
- Wafer-bonded In0.53Ga0.47As/GaN p-n diodes with near-unity ideality factor
- Sengupta, R., Little, B., Mita, S., Markham, K., Dycus, J. H., Stein, S., … Pavlidis, S. (2024), APPLIED PHYSICS LETTERS, 125(6). https://doi.org/10.1063/5.0194526
- Analysis of Vertical GaN JBS and p-n Diodes by Mg Ion Implantation and Ultrahigh-Pressure Annealing
- Stein, S. R., Khachariya, D., Mecouch, W., Mita, S., Reddy, P., Tweedie, J., … Pavlidis, S. (2023, December 12), IEEE TRANSACTIONS ON ELECTRON DEVICES, Vol. 12. https://doi.org/10.1109/TED.2023.3339592
- Anderson transition in compositionally graded p-AlGaN
- Rathkanthiwar, S., Reddy, P., Quinones, C. E., Loveless, J., Kamiyama, M., Bagheri, P., … Sitar, Z. (2023), JOURNAL OF APPLIED PHYSICS, 134(19). https://doi.org/10.1063/5.0176419
- Chemical Vapor Deposition of Monolayer MoS2 on Chemomechanically Polished N-Polar GaN for Future 2D/3D Heterojunction Optoelectronics
- Sengupta, R., Vaidya, S., Szymanski, D., Khachariya, D., Bockowski, M., Kamler, G., … Pavlidis, S. (2023, March 24), ACS APPLIED NANO MATERIALS, Vol. 3. https://doi.org/10.1021/acsanm.3c00038
- Demonstration of near-ideal Schottky contacts to Si-doped AlN
- Quinones, C. E., Khachariya, D., Bagheri, P., Reddy, P., Mita, S., Kirste, R., … Sitar, Z. (2023), APPLIED PHYSICS LETTERS, 123(17). https://doi.org/10.1063/5.0174524
- High conductivity in Ge-doped AlN achieved by a non-equilibrium process
- Bagheri, P., Quinones-Garcia, C., Khachariya, D., Loveless, J., Guan, Y., Rathkanthiwar, S., … Sitar, Z. (2023), APPLIED PHYSICS LETTERS, 122(14). https://doi.org/10.1063/5.0146439
- High p-conductivity in AlGaN enabled by polarization field engineering
- Rathkanthiwar, S., Reddy, P., Moody, B., Quinones-Garcia, C., Bagheri, P., Khachariya, D., … Sitar, Z. (2023), APPLIED PHYSICS LETTERS, 122(15). https://doi.org/10.1063/5.0143427
- Schottky contacts on ultra-high-pressure-annealed GaN with high rectification ratio and near-unity ideality factor
- Stein, S. R., Khachariya, D., Mita, S., Breckenridge, M. H., Tweedie, J., Reddy, P., … Pavlidis, S. (2023), APPLIED PHYSICS EXPRESS, 16(3). https://doi.org/10.35848/1882-0786/acc443
