Ramón Collazo
University Faculty Scholar and Professor
- Email: rcollaz@ncsu.edu
- Office: Research Building I 219
- Website: https://mse.ncsu.edu/collazo
Ramón Collazo received his BS in Physics from the University of Puerto Rico, San Juan, and has been involved in the growth and characterization of wide bandgap semiconductor thin films, especially nitrides and diamond, for the past 11 years. He has been particularly involved in developing a process for controlling the polarity in III-nitrides to develop lateral polarity homojunction along with their application to the first lateral p/n junction. Additionally, he has been involved in the development of AlN bulk single crystal substrates, their surface preparation, and further epitaxial thin film deposition for optoelectronics and power device applications. He was awarded the Facundo Bueso Medal for Physics and has authored over 60 publications and given presentations at national and international conferences.
Collazo’s research interests include Optoelectronic/Power Materials and Devices; III-N Wide Bandgap Semiconductors; Polar Materials: Nitrides and Oxides; Optics: Materials Characterization and Nonlinear
Publications
- Dissolution of Mg-enriched defects in implanted GaN and increased p-type dopant activation
- Huynh, K., Wang, Y., Liao, M. E., Tweedie, J., Reddy, P., Breckenridge, M. H., … Goorsky, M. S. (2024), JOURNAL OF APPLIED PHYSICS, 135(2). https://doi.org/10.1063/5.0179623
- High-current, high-voltage AlN Schottky barrier diodes
- Quinones, C. E., Khachariya, D., Reddy, P., Mita, S., Almeter, J., Bagheri, P., … Sitar, Z. (2024, October 1), https://doi.org/10.35848/1882-0786/ad81c9
- (Invited) Understanding Mg-Related Defects for Vertical GaN p-n Junction Structures Via p-Type Ion Implantation
- Goorsky, M. S., Liao, M. E., Huynh, K., Wang, Y., Tweedie, J., Sitar, Z., … Huang, X. (2023), ECS Meeting Abstracts. https://doi.org/10.1149/MA2023-02351691mtgabs
- Analysis of Vertical GaN JBS and p-n Diodes by Mg Ion Implantation and Ultrahigh-Pressure Annealing
- Stein, S. R., Khachariya, D., Mecouch, W., Mita, S., Reddy, P., Tweedie, J., … Pavlidis, S. (2023, December 12), IEEE TRANSACTIONS ON ELECTRON DEVICES, Vol. 12. https://doi.org/10.1109/TED.2023.3339592
- Anderson transition in compositionally graded p-AlGaN
- Rathkanthiwar, S., Reddy, P., Quinones, C. E., Loveless, J., Kamiyama, M., Bagheri, P., … Sitar, Z. (2023), JOURNAL OF APPLIED PHYSICS, 134(19). https://doi.org/10.1063/5.0176419
- Chemical Vapor Deposition of Monolayer MoS2 on Chemomechanically Polished N-Polar GaN for Future 2D/3D Heterojunction Optoelectronics
- Sengupta, R., Vaidya, S., Szymanski, D., Khachariya, D., Bockowski, M., Kamler, G., … Pavlidis, S. (2023, March 24), ACS APPLIED NANO MATERIALS, Vol. 3. https://doi.org/10.1021/acsanm.3c00038
- Demonstration of near-ideal Schottky contacts to Si-doped AlN
- Quinones, C. E., Khachariya, D., Bagheri, P., Reddy, P., Mita, S., Kirste, R., … Sitar, Z. (2023), APPLIED PHYSICS LETTERS, 123(17). https://doi.org/10.1063/5.0174524
- High conductivity and low activation energy in p-type AlGaN
- Rathkanthiwar, S., Bagheri, P., Khachariya, D., Mita, S., Quiñones-García, C., Guan, Y., … Sitar, Z. (2023), Applied Physics Letters, 122(9). https://doi.org/10.1063/5.0141863
- High conductivity in Ge-doped AlN achieved by a non-equilibrium process
- Bagheri, P., Quinones-Garcia, C., Khachariya, D., Loveless, J., Guan, Y., Rathkanthiwar, S., … Sitar, Z. (2023), APPLIED PHYSICS LETTERS, 122(14). https://doi.org/10.1063/5.0146439
- High p-conductivity in AlGaN enabled by polarization field engineering
- Rathkanthiwar, S., Reddy, P., Moody, B., Quinones-Garcia, C., Bagheri, P., Khachariya, D., … Sitar, Z. (2023), APPLIED PHYSICS LETTERS, 122(15). https://doi.org/10.1063/5.0143427
